ALD212914PAL

N/A

MOSFET 2N-CH 10.6V 0.08A 8DIP

ALD212914PAL

RoHSRoHSga mos keladi
ALD212914PAL
Ishlab chiqaruvchi
N/A
Ishlab chiqaruvchilar qism #
ALD212914PAL
Kategoriyalar
Diskret Semiconductor Mahsulotlar
Sub-toifalar
Tranzistor - FETs, MOSFETs - tillo
Seriya
EPAD®, Zero Threshold™
Part StatusActive
FET turi2 N-Channel (Dual) Matched Pair
FET xususiyatiLogic Level Gate
Source kuchlanishiga quritish (Vdss)10.6V
Amaldagi - Har doim ulfatlarim (Id) 25 ° C @80mA
Id, Vgs @ RDS to'g'risida (Max)-
Id @ Vgs (th) (Maks)20mV @ 10µA
Gate zaryad qiling (QG) (Maks) @ Vgs-
Kirish hajmi (Ciss) (Maks) @ VDS-
Power - Maks500mW
Operatsion harorati-
o'rnatish turiThrough Hole
To'plam / Case8-DIP (0.300", 7.62mm)
Yetkazib beruvchi Device Package8-PDIP
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