ALD212900ASAL

N/A

MOSFET 2N-CH 10.6V 0.08A 8SOIC

ALD212900ASAL

RoHSRoHSga mos keladi
ALD212900ASAL
Ishlab chiqaruvchi
N/A
Ishlab chiqaruvchilar qism #
ALD212900ASAL
Kategoriyalar
Diskret Semiconductor Mahsulotlar
Sub-toifalar
Tranzistor - FETs, MOSFETs - tillo
Seriya
EPAD®, Zero Threshold™
Part StatusActive
FET turi2 N-Channel (Dual) Matched Pair
FET xususiyatiLogic Level Gate
Source kuchlanishiga quritish (Vdss)10.6V
Amaldagi - Har doim ulfatlarim (Id) 25 ° C @80mA
Id, Vgs @ RDS to'g'risida (Max)14 Ohm
Id @ Vgs (th) (Maks)10mV @ 20µA
Gate zaryad qiling (QG) (Maks) @ Vgs-
Kirish hajmi (Ciss) (Maks) @ VDS30pF @ 5V
Power - Maks500mW
Operatsion harorati0°C ~ 70°C (TJ)
o'rnatish turiSurface Mount
To'plam / Case8-SOIC (0.154", 3.90mm Width)
Yetkazib beruvchi Device Package8-SOIC
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