ALD110908PAL

N/A

MOSFET 2N-CH 10.6V 8DIP

ALD110908PAL

RoHSRoHSga mos keladi
ALD110908PAL
Ishlab chiqaruvchi
N/A
Ishlab chiqaruvchilar qism #
ALD110908PAL
Kategoriyalar
Diskret Semiconductor Mahsulotlar
Sub-toifalar
Tranzistor - FETs, MOSFETs - tillo
Seriya
EPAD®
Part StatusActive
FET turi2 N-Channel (Dual) Matched Pair
FET xususiyatiStandard
Source kuchlanishiga quritish (Vdss)10.6V
Amaldagi - Har doim ulfatlarim (Id) 25 ° C @12mA, 3mA
Id, Vgs @ RDS to'g'risida (Max)500 Ohm @ 4.8V
Id @ Vgs (th) (Maks)820mV @ 1µA
Gate zaryad qiling (QG) (Maks) @ Vgs-
Kirish hajmi (Ciss) (Maks) @ VDS2.5pF @ 5V
Power - Maks500mW
Operatsion harorati0°C ~ 70°C (TJ)
o'rnatish turiThrough Hole
To'plam / Case8-DIP (0.300", 7.62mm)
Yetkazib beruvchi Device Package8-PDIP
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